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| SEMiX302GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 150 C Tc = 25 C Tc = 80 C 1200 311 218 200 400 -20 ... 20 10 -40 ... 150 292 202 200 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 400 1300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R) 2s Trench IGBT Modules SEMiX302GB126HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 200 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 200 A RG on = 2.8 RG off = 2.8 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 14.4 0.75 0.65 1600 3.75 320 50 30 600 100 26 0.12 Tj = 25 C Tj = 125 C 5 1.7 2 1 0.9 3.5 5.5 5.8 0.1 2.1 2.45 1.2 1.1 4.5 6.8 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks * Case temperatur limited to TC=125C max. * Not for new design GB (c) by SEMIKRON Rev. 0 - 16.04.2010 1 SEMiX302GB126HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 200 A Tj = 125 C di/dtoff = 5900 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode 0.9 0.7 2.5 3.5 min. typ. 1.6 1.6 1 0.8 3.0 4.0 290 55 22.5 max. 1.80 1.8 1.1 0.9 3.5 4.5 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 SEMiX(R) 2s Trench IGBT Modules SEMiX302GB126HDs IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.19 18 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.045 5 5 250 Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g K Typical Applications* * AC inverter drives * UPS * Electronic Welding Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% Remarks * Case temperatur limited to TC=125C max. * Not for new design GB 2 Rev. 0 - 16.04.2010 (c) by SEMIKRON SEMiX302GB126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 16.04.2010 3 SEMiX302GB126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 16.04.2010 (c) by SEMIKRON SEMiX302GB126HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 16.04.2010 5 |
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